A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments

Garima Bhardwaj, Sandhya K., Richa Dolia, M. Abu-Samak, Shalendra Kumar, P. A. Alvi

Abstract


In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.


Keywords


Heterostructures; InGaAsP; Optical gain; Quantum well

Full Text:

PDF

References


Pyare Lal, Shobhna Dixit, F. Rahman, P. A. Alvi, "Gain Simulation of Lasing Nano-Heterostructure Al0.10Ga0.90As/GaAs", Physica E: Low-dimensional systems and Nanostructures, 46, pp. 224-231 (2012).

P. A. Alvi, Pyare Lal, S. Dalela, M. J. Siddiqui, "An Extensive Study on Simple and GRIN SCH based In0.71Ga0.21Al0.08As/InP Lasing heterostructure", Physica Scripta, 85, 035402 (2012).

Pyare Lal, Rashmi Yadav, Meha Sharma, F. Rahman, S. Dalela, P. A. Alvi, “Qualitative analysis of gain spectra of InGaAlAs/InP lasing nano-heterostructure†International Journal of Modern Physics B, Vol. 28, No. 29, pp. 1450206 (2014).

M. Bajdaa, W. Trzeciakowski and J.A. Majewski, “Wide Range Wavelength Tuning of InGaAsP/InP Laser Diodesâ€, Acta Physica Polonica A, No. 5, Vol. 120, 852-855 (2011).

Hongping Zhao and Nelson Tansu, “Optical gain characteristics of staggered InGaN quantum wells lasersâ€, J. of Appl. Phys. 107, 113110 (2010).

C. Berger, C. Möller, P. Hens, C. Fuchs, W. Stolz, S. W. Koch, A. Ruiz Perez, J. Hader, and J. V. Moloney, “Novel type-II material system for laser applications in the near-infrared regimeâ€, AIP Advances, 047105 (2015).

H. K. Nirmal, Nisha Yadav, F. Rahman, P. A. Alvi, “Optimization of high optical gain in type –II In0.70Ga0.30As/GaAs0.40Sb0.60 lasing nano-heterostructure for SWIR applicationsâ€, Superlattices and Microstructures, Vol. 88, pp. 154-160 (2015).

H. K. Nirmal, Nisha Yadav, S. Dalela, Amit Rathi, M. J. Siddiqui, P. A. Alvi, “Tunability of optical gain (SWIR region) in type-II In0.70Ga0.30As/GaAs0.40Sb0.60 nano-heterostructure under high pressureâ€, Physica E: Low-dimensional systems and Nanostructures, 80, pp. 36-42 (2016).

Nisha Yadav, Garima Bhardwaj, S. G. Anjum, S. Dalela, M. J. Siddiqui, P. A. Alvi, “Investigation of high optical gain in complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure for MIR applicationsâ€, Applied Optics, Vol. 56, No. 15 (2017).

Garima Bhardwaj, Nisha Yadav, S. G. Anjum, M. J. Siddiqui, P. A. Alvi, “Uniaxial strain induced optical properties of complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructureâ€, International Journal of light & electron optics: Optik, 146 8–16 (2017).

Baile Chen, W.Y. Jiang, A.L. Holmes Jr., “Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodesâ€, Opt. Quantum Electron. 44 (3-5), 103-109 (2012).

Cheng Liu, Yu Kee Ooi, and Jing Zhang, “Proposal and physics of AlInN-delta-GaN quantum well ultraviolet lasersâ€, Journal of Applied Physics 119, 083102 (2016).

Chee-Keong Tan, Wei Sun, Damir Borovac & Nelson Tansu, “Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emittersâ€, Sci. Rep. 6, 22983; doi: 10.1038/srep22983 (2016).

Taniyasu, Y. & Kasu, M. “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlatticesâ€, Appl. Phys. Lett. 99, 251112 (2011).

Tan, C. K. & Tansu, N. “Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters†Proc. of the IEEE Photonics Conference, 577-578 (2015).

D. Rosales, T. Bretagnon, and B. Gil, A. Kahouli, J. Brault, B. Damilano, and J. Massies, M. V. Durnev, A. V. Kavokin, “Excitons in nitride heterostructures: From zero- to one-dimensional behaviorâ€, Phy. Rev. B, 88, 125437 (2013).

Thi Huong Ngo, Bernard Gil, Benjamin Damilano, Kaddour Lekhal, Philippe De Mierry, “Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar directionâ€, Superlattices and Microstructures 103, 245-251 (2017).

P. A. Alvi, “Transformation of type-II InAs/AlSb nanoscale heterostructure into type-I structure and improving interband optical gainâ€, Phys. Status Solidi B 254, No. 5, 1600572 (2017).

Yoon-Suk Kim, Martijn Marsman, and Georg Kresse, “Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductorsâ€, Phys. Rev. B, 82, 205212 (2010).

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloysâ€, J. Appl. Phys. 89, 5815 (2001).

Shun Lien Chuang, Physics of Photonic Devices, Willey & Sons, Inc., 2nd Edition (2009).




DOI: https://doi.org/10.11591/eei.v7i1.872

Refbacks

  • There are currently no refbacks.




Bulletin of EEI Stats

Bulletin of Electrical Engineering and Informatics (BEEI)
ISSN: 2089-3191, e-ISSN: 2302-9285
This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).